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 JMnic
Product Specification
Silicon PNP Power Transistors
2SB861
DESCRIPTION With TO-220C package Complement to type 2SD1138 APPLICATIONS Low frequency power amplifier color TV vertical deflection output
PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base
Absolute maximum ratings(Ta=25ae )
SYMBOL VCBO VCEO VEBO IC ICP PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Ta=25ae PC Collector power dissipation TC=25ae Tj Tstg Junction temperature Storage temperature 30 150 -45~150 ae ae CONDITIONS Open emitter Open base Open collector VALUE -200 -150 -6 -2 -5 1.8 W UNIT V V V A A
JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown votage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current DC current gain DC current gain Output capacitance CONDITIONS IC=-50mA; RBE= IE=-5mA; IC=0 IC=-0.5 A;IB=-50m A IC=-50mA ; VCE=-4V VCB=-120V; IE=0 IC=-50mA ; VCE=-4V IC=-0.5A ; VCE=-10V IE=0 ;VCB=-100V,f=1MHz 60 60 30 MIN -150 -6 TYP.
2SB861
SYMBOL V(BR)CEO V(BR)EBO VCEsat VBE ICBO hFE-1 hFE-2 COB
MAX
UNIT V V
-3.0 -1.0 -1 200 |I
V V A
pF
hFE-1 classifications B 60-120 C 100-200
2
JMnic
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB861
Fig.2 Outline dimensions (unindicated tolerance:A
0.10 mm)
3
JMnic
Product Specification
Silicon PNP Power Transistors
2SB861
4


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